Handbook of Thin Film Devices by Maurice H. Francombe (Auth.)

By Maurice H. Francombe (Auth.)

Content material:
Foreword and publication Plan

, Pages v-vii
Preface for quantity I

, Pages xi-xii
Preface for quantity II

, Pages xiii-xiv
Preface for quantity III

, Pages xi-xii
Preface for quantity IV

, Pages xi-xii
Preface for quantity V

, Pages xi-xiii
List of individuals for quantity I

, Pages xv-xvi
List of members for quantity II

, Pages xiii-xiv
List of individuals for quantity III

, Page xiii
List of individuals for quantity IV

, Page xiii
List of participants for quantity V

, Page xv
Chapter 1 - Epitaxial movie development and Characterization

, Pages 1-53,I-II
Chapter 2 - Processing of Epitaxial Heterostructure Devices

, Pages 55-102
Chapter three - box influence Transistors: FETs and HEMTs

, Pages 103-156
Chapter four - Heterojunction Bipolar Transistors

, Pages 157-192
Chapter five - Gan-Based Modulation-Doped Field-Effect Transistors and Ultraviolet Detectors

, Pages 193-216
Chapter 6 - Silicon Germanium Alloy Devices

, Pages 217-248
Chapter 7 - Silicon Carbide strength Devices

, Pages 249-298
Chapter eight - GaN-Based Pyroelectronics and Piezoelectronics

, Pages 299-339
Chapter 1 - HgCdTe Infrared Detectors

, Pages 1-25
Chapter 2 - Antimony-Based Infrared fabrics and Devices

, Pages 27-62
Chapter three - Quantum good Infrared Photodetectors (QWIP)

, Pages 63-99
Chapter four - An advent to the Physics of Quantum good Infrared Photodetectors and different comparable New Devices

, Pages 101-134
Chapter five - Semiconductor Photoemissive buildings for much Infrared Detection

, Pages 135-170
Chapter 6 - Interband III-V Mid-IR Semiconductor Lasers

, Pages 171-193
Chapter 7 - High-Performance Quantum Cascade Laser

, Pages 195-224
Chapter eight - InGaN-Based UV/Blue/Green LED and LD Structure

, Pages 225-263
Chapter nine - Plasma Displays

, Pages 265-283,III-IV
Chapter 10 - Liquid Crystal Displays

, Pages 285-309
Chapter eleven - fresh Advances in skinny movie sun Cells

, Pages 311-362
Chapter 1 - Synthesis and Characterization of Superconducting skinny Films

, Pages 1-33
Chapter 2 - Fabrication of Superconducting units and Circuits

, Pages 35-69
Chapter three - electronic options and Applications

, Pages 71-98
Chapter four - Superconducting Microwave gadget homes and Applications

, Pages 99-123
Chapter five - Detectors for Infrared, Optical and X-ray Photons

, Pages 125-148
Chapter 6 - Squid Magnetometers

, Pages 149-225
Chapter 1 - everlasting Magnet motion pictures for Applications

, Pages 1-36
Chapter 2 - Magneto-Optical Recording skinny Films

, Pages 37-91
Chapter three - Epitaxial Garnet motion pictures for Nonreciprocal Magneto-Optic Devices

, Pages 93-141
Chapter four - Microwave Magnetic movie Devices

, Pages 143-184
Chapter five - Magnetic motion pictures for Planar Inductive parts and Devices

, Pages 185-212
Chapter 1 - Ferroelectric skinny movies: instruction and Characterization

, Pages 1-45
Chapter 2 - Ferroelectric Random entry reminiscence (feram) Technology

, Pages 47-77
Chapter three - prestige of Metal-Ferroelectric- Semiconductor box influence Transistors (MFSFETs) and comparable Devices

, Pages 79-89
Chapter four - Integration elements of complicated Ferroelectric Thin-Film Memories

, Pages 91-112
Chapter five - Tunable Dielectric fabrics and units for Broadband instant Communications

, Pages 113-142
Chapter 6 - Pyroelectric units and Applications

, Pages 143-202
Chapter 7 - Ferroelectric units for Microelectromechanical structures (mems) Applications

, Pages 203-226
Index for quantity I

, Pages 341-352
Index for quantity II

, Pages 363-372
Index for quantity III

, Pages 227-233
Index for quantity IV

, Pages 213-220
Index for quantity V

, Pages 227-235

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Handbook of Thin Film Devices

Content material: Foreword and ebook Plan, Pages v-viiPreface for quantity I, Pages xi-xiiPreface for quantity II, Pages xiii-xivPreface for quantity III, Pages xi-xiiPreface for quantity IV, Pages xi-xiiPreface for quantity V, Pages xi-xiiiList of individuals for quantity I, Pages xv-xviList of members for quantity II, Pages xiii-xivList of participants for quantity III, web page xiiiList of members for quantity IV, web page xiiiList of individuals for quantity V, web page xvChapter 1 - Epitaxial movie progress and Characterization, Pages 1-53,I-IIChapter 2 - Processing of Epitaxial Heterostructure units, Pages 55-102Chapter three - box influence Transistors: FETs and HEMTs, Pages 103-156Chapter four - Heterojunction Bipolar Transistors, Pages 157-192Chapter five - Gan-Based Modulation-Doped Field-Effect Transistors and Ultraviolet Detectors, Pages 193-216Chapter 6 - Silicon Germanium Alloy units, Pages 217-248Chapter 7 - Silicon Carbide energy units, Pages 249-298Chapter eight - GaN-Based Pyroelectronics and Piezoelectronics, Pages 299-339Chapter 1 - HgCdTe Infrared Detectors, Pages 1-25Chapter 2 - Antimony-Based Infrared fabrics and units, Pages 27-62Chapter three - Quantum good Infrared Photodetectors (QWIP), Pages 63-99Chapter four - An creation to the Physics of Quantum good Infrared Photodetectors and different comparable New units, Pages 101-134Chapter five - Semiconductor Photoemissive constructions for a lot Infrared Detection, Pages 135-170Chapter 6 - Interband III-V Mid-IR Semiconductor Lasers, Pages 171-193Chapter 7 - High-Performance Quantum Cascade Laser, Pages 195-224Chapter eight - InGaN-Based UV/Blue/Green LED and LD constitution, Pages 225-263Chapter nine - Plasma monitors, Pages 265-283,III-IVChapter 10 - Liquid Crystal screens, Pages 285-309Chapter eleven - fresh Advances in skinny movie sunlight Cells, Pages 311-362Chapter 1 - Synthesis and Characterization of Superconducting skinny movies, Pages 1-33Chapter 2 - Fabrication of Superconducting units and Circuits, Pages 35-69Chapter three - electronic suggestions and purposes, Pages 71-98Chapter four - Superconducting Microwave machine houses and functions, Pages 99-123Chapter five - Detectors for Infrared, Optical and X-ray Photons, Pages 125-148Chapter 6 - Squid Magnetometers, Pages 149-225Chapter 1 - everlasting Magnet motion pictures for purposes, Pages 1-36Chapter 2 - Magneto-Optical Recording skinny motion pictures, Pages 37-91Chapter three - Epitaxial Garnet movies for Nonreciprocal Magneto-Optic units, Pages 93-141Chapter four - Microwave Magnetic movie units, Pages 143-184Chapter five - Magnetic motion pictures for Planar Inductive parts and units, Pages 185-212Chapter 1 - Ferroelectric skinny motion pictures: education and Characterization, Pages 1-45Chapter 2 - Ferroelectric Random entry reminiscence (feram) expertise, Pages 47-77Chapter three - prestige of Metal-Ferroelectric- Semiconductor box influence Transistors (MFSFETs) and similar units, Pages 79-89Chapter four - Integration points of complicated Ferroelectric Thin-Film stories, Pages 91-112Chapter five - Tunable Dielectric fabrics and units for Broadband instant Communications, Pages 113-142Chapter 6 - Pyroelectric units and functions, Pages 143-202Chapter 7 - Ferroelectric units for Microelectromechanical structures (mems) purposes, Pages 203-226Index for quantity I, Pages 341-352Index for quantity II, Pages 363-372Index for quantity III, Pages 227-233Index for quantity IV, Pages 213-220Index for quantity V, Pages 227-235

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Additional resources for Handbook of Thin Film Devices

Sample text

The emphasis is now on the growth of high-quality films over large high-volume platters (up to 400-mm diameter), containing multiple wafers (see Fig. 14). This new focus requires growth systems in which the deposition is laterally uniform, abruptly switchable, and robust 22 EPITAXIAL FILM GROWTH AND CHARACTERIZATION enough to withstand variations in process parameters. Moreover, when purchasing growth equipment, the focus is now on specifying the quality of the material produced rather than the details of the equipment.

4). Both XRD and Raman spectroscopy have been used to measure the crystalline and doping properties of SiC prior to epitaxial growth. The spatial uniformity of SiC wafers is especially important if these materials are to be used in high-power electronics or as a substrate for nitride semiconductor growth [129]. 19 shows the high resolution x-ray rocking diffraction (HRXRD) curves of a symmetric (0 0 12) and asymmetric (102) reflection of SiC. The full width at half maximium (FWHM) of the symmetric reflection is approximately 21 arcseconds and this is similar to that of GaAs and sapphire substrate materials.

This leads to degradation of semiconductor electrical and optical properties [125]. 3. 1. MATERIALS CHARACTERIZATION Introduction Following the development of the growth techniques described in the last section, the next most important element of materials growth is the characterization techniques used in materials optimization. The characterization techniques used to study the different III-V material properties were developed parallel to the deposition techniques. At first, most of these techniques were specific to a particular laboratory and the measurements were mostly completed on especially constructed equipment.

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